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this is information on a product in full production. march 2012 doc id 019007 rev 3 1/13 13 STFI20NK50Z n-channel 500 v, 0.23 , 17 a zener-protected supermesh? power mosfet in i2pakfp package datasheet ? production data features fully insulated and low profile package with increased creepage path from pin to heatsink plate extremely high dv/dt capability 100% avalanche tested gate charge minimized applications switching applications description this device is an n-channel zener-protected power mosfet developed using stmicroelectronics' supermesh? technology, achieved through optimization of st's well- established strip-based powermesh? layout. in addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. figure 1. internal schematic diagram type v dss r ds(on) max i d p tot STFI20NK50Z 500 v < 0.27 17 a 40 w i 2 pakfp 1 2 3 (to-281) d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging STFI20NK50Z 20nk50z i 2 pakfp (to-281) tube www.st.com
contents STFI20NK50Z 2/13 doc id 019007 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STFI20NK50Z electrical ratings doc id 019007 rev 3 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 500 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 17 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 10.71 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 68 a p tot total dissipation at t c = 25 c 40 w esd gate-source human body model (r=1,5 k , c=100 pf) 6kv v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v dv/dt (3) 3. i sd < 17 a, di/dt < 200 a/s, v dd =80% v (br)dss peak diode recovery voltage slope 4.5 v/ns t stg storage temperature -55 to 150 c t j max operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 3.1 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar (1) 1. limited by maximum junction temperature. repetitive or non repetitive avalanche current 17 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar , v dd =50 v) 850 mj
electrical characteristics STFI20NK50Z 4/13 doc id 019007 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d =1 ma 500 v i dss zero gate voltage drain current (v gs = 0) v ds = 500 v v ds = 500 v, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 8.5 a 0.23 0.27 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 8.5 a - 13 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 2600 328 72 pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . equivalent output capacitance v ds =0, v ds = 0 to 640 v - 187 pf t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 250 v, i d = 8.5 a, r g = 4.7 , v gs = 10 v (see figure 15 ) - 28 20 70 15 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 17 a, v gs = 10 v (see figure 16 ) - 85 15.5 42 119 nc nc nc
STFI20NK50Z electrical characteristics doc id 019007 rev 3 5/13 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% source-drain current source-drain current (pulsed) - 17 68 a a v sd (2) 2. pulse width limited by safe operating area. forward on voltage i sd = 17 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v r = 100 v (see figure 17 ) - 355 3.90 22 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v r = 100 v, tj = 150 c (see figure 17 ) - 440 5.72 26 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage (i d = 0) i gs = 1ma 30 - v
electrical characteristics STFI20NK50Z 6/13 doc id 019007 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance
STFI20NK50Z electrical characteristics doc id 019007 rev 3 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. maximum avalanche energy vs temperature figure 13. normalized b vdss vs temperature -; a `ad_ h 9e fz f < z5 h 6e /h 9e ; 6 /#"" g 3 a -; a d 6e a` `ad_ f < z5 h 9e /#"h ; 6 /* '3 a -; 7 se _< f < z5 ; 6 /#)3 -; a `ad_ 4h 6ee h f < z5 ; 6 /#_3 a
electrical characteristics STFI20NK50Z 8/13 doc id 019007 rev 3 figure 14. source-drain diode forward characteristic
STFI20NK50Z test circuits doc id 019007 rev 3 9/13 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STFI20NK50Z 10/13 doc id 019007 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STFI20NK50Z package mechanical data doc id 019007 rev 3 11/13 figure 21. i 2 pakfp (to-281) drawing table 9. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
revision history STFI20NK50Z 12/13 doc id 019007 rev 3 5 revision history table 10. document revision history date revision changes 01-jul-2011 1 first release. 11-nov-2011 2 figure 2: safe operating area and figure 3: thermal impedance have been added. 20-mar-2012 3 document status promoted from preliminary data to production data. the package name has been updated.
STFI20NK50Z doc id 019007 rev 3 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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